VISHAY SI6562CDQ-T1-GE3 Dual MOSFET, N and P Channel, 6.7 A, 20 V, 0.18 ohm, 4.5 V, 600 mV Test Equipment Accessories Proven strength and reliability

Proven strength and reliability

5ms Turn-on/turn-off maximum time

of Poles 3 Pole Load Current Inductive 9A Contact Configuration 3NO / 1NO Switching Power AC3 4kW Switching Power AC1 - Other details

Voltage Rating V AC 250V Fuse Current 7A Fuse Size Imperial 1/4" x 1-1/4" Blow Characteristic Time Delay Product Range MDA Series Breaking Capacity Current AC 200A Fuse Size Metric 6

compact tripod has a maximum height of 5

VISHAY SI6562CDQ-T1-GE3 Dual MOSFET, N and P Channel, 6.7 A, 20 V, 0.18 ohm, 4.5 V, 600 mV Test Equipment Accessories Proven strength and reliabilityThis is a Dual MOSFET, N and P Channel, 6. 7 A, 20 V, 0. 18 ohm, 4. 5 V, 600 mV product from VISHAY with the model number SI6562CDQ T1 GE3Product details Transistor Polarity N and P Channel Continuous Drain Current Id 6. 7A Drain Source Voltage Vds 20V On Resistance Rds(on) 0. 18ohm Rds(on) Test Voltage Vgs 4. 5V Threshold Voltage Vgs 600mV Power Dissipation Pd 1. 6W Transistor Case Style TSSOP No. of Pins 8Pins Operating Temperature Max 150C Product